Destructive-read in embedded DRAM, impact on power consumption

This paper explores power consumption for destructive-read embedded DRAM. Destructive-read DRAM is based on conventional DRAM design, but with sense amplifiers optimized for lower latency. This speed increase is achieved by not conserving the content of the DRAM cell after a read operation. Random access time to DRAM was reduced from 6 ns to 3 ns in a prototype made by Hwang et. al. A write-back buffer was used to conserve data. We have proposed a new scheme for write-back using the usually smaller cache instead of a large additional write-back buffer. Write-back is performed whenever a cache line is replaced. This increases bus and DRAM bank activity compared to a conventional architecture which again increases power consumption. On the other hand computational performance is improved through faster DRAM accesses. Simulation of a CPU, DRAM and a 2 kbytes cache show that the power consumption increased by 3% while the performance increased by 14% for the applications in the SPEC2000 benchmark. With a 16 kbytes cache the power consumption increased by 0.5% while performance increased by 4.5%.